Preparation, Chemical Composition, and Optical Properties of (β–Ga2O3 Composite Thin Films)/(GaSxSe1−x Lamellar Solid Solutions) Nanostructures

GaSxSe1−x solid solutions are layered semiconductors with a band gap between 2.0 and 2.6 eV. Their single crystals formed by planar packings of S/Se-Ga-Ga-S/Se type, weak polarization bonds them, which allows obtaining, splitting, plan-parallel lamellae atomically smooth surfaces. By heat treatment in normal or water vapor-enriched atmosphere, their plates covered layer consisting β–Ga2O3 nanowires/nanoribbons. In this work, the elemental chemical composition, surface morphology, as well optical, photoluminescent, photoelectric properties on (0 ≤ x 1) (as substrate) studied. The correlation is made composition (x) primary material, technological preparation conditions oxide-semiconducting layer, photoelectric, photoluminescent (nanosized layers)/GaSxSe1−x structures. From analysis fundamental absorption edge, photoluminescence, photoconductivity, character optical transitions range 4.5–4.8 eV were determined, mechanisms behind blue-green photoluminescence photoconductivity region. bands region characteristic nanowires/nanolamellae structures solution substrate determined strong absorption. As synthesized hold promise for potential applications UV receivers, UV-C sources, gas sensors, photocatalytic decomposition organic pollutants.